Структура документа: Second breakdown

Second breakdown / [guest editor: William M. Portnoy]

Другие авторы/ответственные:	Portnoy, William M.
Вид документа:	Периодические издания
Опубликовано:	[S. l. : s. n., 1966]
Язык:	Английский
Серия:	IEEE transactions on electron devices ; vol. 13, № 8/9

IEEE transactions on electron devices

1979,Vol.26,№8 : Displays and LED's
1978,Vol.25,№8 : SOS technology and nonvolatile memory technology
1980,Vol.27,№12 : Characterization techniques for semiconductor materials, processes, and devices
1997,Vol.44,№8 : Organic and polymeric active devices
1997,Vol.44,№10 : Solid-state image sensors
1978,Vol.25,№6 : Microwave semiconductor devices
1978,Vol.25,№4 : Fine line device fabrication
1995,Vol.42,№3 : Bipolar BiCMOS/CMOS devices and technologies
1994,Vol.41,№11 : Fluctuation phenomena in electronic and photonic devices
1996,Vol.43,№10 : Present and future trends in device science and technologies
1999,Vol.46,№3 : Silicon carbide electronic devices
1999,Vol.46,№10 : Photovoltaic solar cell science and engineering
1998,Vol.45,№3 : Process integration and manufacturability
1998,Vol.45,№5 : SOI integrated circuits and devices
1977,Vol.24,№5 : Nonvolatile semiconductor memory
1977,Vol.24,№4 : Photovoltaic devices
1977,Vol.24,№7 : Displays and LED's
1978,Vol.25,№2 : Joint special issue on optoelectronic devices and circuits
1991,Vol.38,№10 : Megawatt microwave tubes for space
1976,Vol.23,№8 : High-power semiconductor devices
1976,Vol.23,№7 : Historical notes on important tubes and semiconductor devices
1973,Vol.20,№11 : Display devices
1975,Vol.22,№7 : Pattern generation and microlithography
1975,Vol.22,№9 : Display devices and systems
1976,Vol.23,№2 : Charge-transfer devices
1992,Vol.39,№1 : Rapid isothermal processing
1991,Vol.38,№7 : High-voltage and power integrated circuits and devices
1969,Vol.16,№10 : Solid state sensors
1969,Vol.16,№8 : Thermionic energy conversion
1970,Vol.17,№3 : Wave interactions in solids
1970,Vol.17,№9 : High-power semiconductor devices
1971,Vol.18,№9 : Information display devices
1969,Vol.16,№6 : Ferroelectrics
1969,Vol.16,№4 : Reliability physics issue
1967,Vol.14,№9 : Semiconductor bulk effect and transit-time devices. 2
1966,Vol.13,№8/9 : Second breakdown
1968,Vol.15,№4 : Solid-state imaging
1968,Vol.15,№7 : Microwave integrated circuits
1968,Vol.15,№12 : MIS issue
1971,Vol.18,№11 : Image-sensing devices
1972,Vol.19,№4 : Electrographic processes
1980,Vol.27,№4 : Photovoltaic devices
1980,Vol.27,№2 : Power MOS devices
1980,Vol.27,№10 : Josephson-junction devices
1991,Vol.38,№4 : Power modulator symposium, June 1990
1991,Vol.38,№5 : Solid-state image sensors
1980,Vol.27,№1 : Infrared materials devices and applications
1979,Vol.26,№12 : Solid-state sensors, actuators, and interface electronics
1973,Vol.20,№2 : Amorphous semiconductor devices
1978,Vol.25,№10 : Three-dimensional semiconductor device structures
1979,Vol.26,№6 : Semiconductor memory
1979,Vol.26,№10 : Pulse power modulators/microwave tubes
1966,Vol.13,№1 : Semiconductor bulk-effect and transit-time devices

Другие заглавия:	Special issue on second breakdown
Примечания:	Выхадныя даныя арыгінала: New York : Institute of Electrical and Electronics Engineers, 1966 Бібліяграфія ў канцы артыкулаў і ў падрадковых заўвагах